Method and apparatus for identifying defects in a chemical sensor arraymethod and apparatus for identifying defects in a chemical sensor array

ABSTRACT

In one implementation, a method for operating an apparatus is described. The method includes applying a bias voltage to place a transistor of a reference sensor in a known state. The reference sensor is in an array of sensors that further includes a chemical sensor coupled to a reaction region for receiving at least one reactant. The method further includes acquiring an output signal from the reference sensor in response to the applied bias voltage. The method further includes determining a defect associated with the array if the output signal does not correspond to the known state.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser. No. 14/830,559, filed Aug. 19, 2015. U.S. application Ser. No. 14/830,559 is a divisional application of U.S. patent application Ser. No. 13/690,959 filed Nov. 30, 2012, now U.S. Pat. No. 9,970,984. U.S. Pat. No. 9,970,984 claims priority to U.S. Provisional Application No. 61/565,602 filed Dec. 1, 2011. All applications cited in this section are incorporated by reference herein, each in its entirety.

BACKGROUND

The present disclosure relates to sensors for chemical analysis, and more particularly to methods for testing a chemical sensor array for defects.

A variety of types of chemical sensors have been used in the detection of various chemical processes. One type is a chemically-sensitive field effect transistor (chemFET). A chemFET includes a source and a drain separated by a channel region, and a chemically sensitive area coupled to the channel region. The operation of the chemFET is based on the modulation of channel conductance, caused by changes in charge at the sensitive area due to a chemical reaction occurring nearby. The modulation of the channel conductance affects the threshold voltage of the chemFET, which can be measured to detect and/or determine characteristics of the chemical reaction. The threshold voltage may for example be measured by applying appropriate bias voltages to the source and drain, and measuring a resulting current flowing through the chemFET. As another example, the threshold voltage may be measured by driving a known current through the chemFET, and measuring a voltage at the source or drain.

An ion-sensitive field effect transistor (ISFET) is a type of chemFET that includes an ion-sensitive layer at the sensitive area. The presence of ions in an analyte solution alters the surface potential at the interface between the ion-sensitive layer and the analyte solution, usually due to the dissociation of oxide groups by the ions in the analyte solution. The change in surface potential at the sensitive area of the ISFET affects the threshold voltage of the device, which can be measured to indicate the presence and/or concentration of ions within the solution.

Arrays of ISFETs may be used for monitoring chemical reactions, such as DNA sequencing reactions, based on the detection of ions present, generated, or used during the reactions. See, for example, U.S. Pat. No. 7,948,015 to Rothberg et al., which is incorporated by reference herein. More generally, large arrays of chemFETs or other types of chemical sensors may be employed to detect and measure static and/or dynamic amounts or concentrations of a variety of analytes (e.g. hydrogen ions, other ions, compounds, etc.) in a variety of processes. The processes may for example be biological or chemical reactions, cell or tissue cultures or monitoring, neural activity, nucleic acid sequencing, etc.

The cost and effort associated with an experiment using a chemical sensor array can be significant. It is therefore desirable to provide techniques for accurately determining whether a chemical sensor array is functioning properly, prior to conducting an experiment.

SUMMARY

In one implementation, an apparatus is described that includes an array of sensors including a chemical sensor and a reference sensor. The chemical sensor is coupled to a reaction region for receiving at least one reactant, and the reference sensor includes a transistor having a control terminal coupled to a reference node. The apparatus further includes a controller to apply a bias voltage to the reference node to place the transistor in a known state. The controller further acquires an output signal from the reference sensor in response to the applied bias voltage. The controller further determines a defect associated with the array if the output signal does not correspond to the known state.

In another implementation, an apparatus is described that includes an array of sensors including a plurality of chemical sensors and a plurality of reference sensors. Each chemical sensor is coupled to a corresponding reaction region for receiving at least one reactant. Each reference sensor includes a field effect transistor having a gate coupled to a corresponding reference line. The apparatus further includes an access circuit for accessing the chemical sensors and the reference sensors. The apparatus further includes a controller to apply bias voltages to the reference lines to select corresponding reference sensors. The controller further acquires output signals from the selected reference sensors. The controller further identifies one or more defects in the access circuit based on differences between the acquired output signals and the expected output signals.

In yet another implementation, a method for operating an apparatus is described. The method includes applying a bias voltage to place a transistor of a reference sensor in a known state. The reference sensor is in an array of sensors that further includes a chemical sensor coupled to a reaction region for receiving at least one reactant. The method further includes acquiring an output signal from the reference sensor in response to the applied bias voltage. The method further includes determining a defect associated with the array if the output signal does not correspond to the known state.

Other implementations may include a non-transitory computer readable storage medium storing instructions executable by a processor to perform a method as described above. Yet another implementation may include a system including memory and one or more processors operable to execute instructions, stored in the memory, to perform a method as described above.

Particular aspects of one more implementations of the subject matter described in this specification are set forth in the drawings and the description below. Other features, aspects, and advantages of the subject matter will become apparent from the description, the drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a block diagram of components of a system for nucleic acid sequencing according to an exemplary embodiment.

FIG. 2 illustrates cross-sectional and expanded views of a portion of the integrated circuit device and flow cell of FIG. 1.

FIG. 3 illustrates a schematic diagram of a portion of a chemical sensor array according to an exemplary embodiment.

FIG. 4 is a flow chart of an example process for detecting a defect associated with a sensor array according to an exemplary embodiment.

FIG. 5 illustrates a schematic diagram of a sensor array with first and second sets of reference sensors arranged along the periphery of the array.

FIG. 6 is a flow chart of an example process for determining whether defects are associated with the sensor array of FIG. 5 according to an exemplary embodiment.

DETAILED DESCRIPTION

Techniques are described herein for detecting and/or identifying defects associated with chemical sensor arrays, so that the experiments are not conducted using defective devices. These defects can include, among other things, defective column circuits and/or row circuits used to access the sensors in the array. If not detected, these defective circuits can result in incorrect data being collected when the array is used to conduct an experiment. By testing the array using the techniques described herein, the issues associated with the subsequent use of a defective sensor array can be reduced or eliminated.

Sensor arrays described herein include one or more reference sensors and one or more chemical sensors. A reference sensor includes a transistor which can be used to determine whether defects are associated with the array, prior to conducting an experiment. For example, in an experiment that includes flowing one or more solutions over the array, a reference sensor can allow the testing of the device containing the array, without exposing the array to solution. A reference sensor may for example have the same or similar structure as a chemical sensor, but lack the chemical sensitivity of the chemical sensor.

The chemical sensors may for example be chemically-sensitive field effect transistors (chemFETs), such as ion-sensitive field effect transistors (ISFETS). Examples of chemical sensors that may be used in embodiments are described in U.S. Patent Application Publication No. 2010/0300559, No. 2010/0197507, No. 2010/0301398, No. 2010/0300895, No. 2010/0137143, and No. 2009/0026082, and U.S. Pat. No. 7,575,865, each which are incorporated by reference herein.

Prior to using the array in an experiment, the output signals from one or more reference sensors can be collected and processed by a controller (e.g. a computer or other type of data processor) internal or external to the device containing the array. This processing includes determining whether defects are associated with the array as described herein.

In various exemplary embodiments, the methods, systems, and computer readable media described herein may advantageously ensure that properly functioning sensor arrays are used in subsequent experiments, such as electronic or charged-based nucleic acid sequencing. In electronic or charged-based sequencing (such as, pH-based sequencing), a nucleotide incorporation event may be determined by detecting ions (e.g., hydrogen ions) that are generated as natural by-products of polymerase-catalyzed nucleotide extension reactions. This may be used to sequence a sample or template nucleic acid, which may be a fragment of a nucleic acid sequence of interest, for example, and which may be directly or indirectly attached as a clonal population to a solid support, such as a particle, microparticle, bead, etc. The sample or template nucleic acid may be operably associated to a primer and polymerase and may be subjected to repeated cycles or “flows” of deoxynucleoside triphosphate (“dNTP”) addition (which may be referred to herein as “nucleotide flows” from which nucleotide incorporations may result) and washing. The primer may be annealed to the sample or template so that the primer's 3′ end can be extended by a polymerase whenever dNTPs complementary to the next base in the template are added. Then, based on the known sequence of nucleotide flows and on measured output signals of the chemical sensors indicative of ion concentration during each nucleotide flow, the identity of the type, sequence and number of nucleotide(s) associated with a sample nucleic acid present in a reaction region coupled to a sensor can be determined.

FIG. 1 illustrates a block diagram of components of a system for nucleic acid sequencing according to an exemplary embodiment. The components include a flow cell 101 on an integrated circuit device 100, a reference electrode 108, a plurality of reagents 114 for sequencing, a valve block 116, a wash solution 110, a valve 112, a fluidics controller 118, lines 120/122/126, passages 104/109/111, a waste container 106, an array controller 124, and a user interface 128. The integrated circuit device 100 includes a microwell array 107 overlying a sensor array that includes chemical sensors and reference sensors arranged in rows and columns. The flow cell 101 includes an inlet 102, an outlet 103, and a flow chamber 105 defining a flow path of reagents over the microwell array 107.

The reference electrode 108 may be of any suitable type or shape, including a concentric cylinder with a fluid passage or a wire inserted into a lumen of passage 111. The reagents 114 may be driven through the fluid pathways, valves, and flow cell 101 by pumps, gas pressure, or other suitable methods, and may be discarded into the waste container 106 after exiting the outlet 103 of the flow cell 101. The fluidics controller 118 may control driving forces for the reagents 114 and the operation of valve 112 and valve block 116 with suitable software.

The microwell array 107 includes an array of reaction regions, also referred to herein as microwells, which are operationally associated with corresponding chemical sensors in the sensor array. For example, each microwell may be coupled to a chemical sensor suitable for detecting an analyte or reaction property of interest within that microwell. The microwell array 107 may be integrated in the integrated circuit device 100, so that the microwell array 107 and the sensor array are a single device or chip.

The flow cell 101 may have a variety of configurations for controlling the path and flow rate of reagents 114 over the microwell array 107. The array controller 124 provides bias voltages and timing and control signals to the integrated circuit device 100 for reading the reference sensors and chemical sensors of the sensor array. The array controller 124 also provides a reference bias voltage to the reference electrode 108 to bias the reagents 114 flowing over the microwell array 107.

Prior to beginning an experiment for nucleic acid sequencing, the array controller 124 collects and processes output signals from reference sensors of the sensor array through output ports on the integrated circuit device 100 via bus 127. As described in more detail below, this processing includes determining whether the integrated circuit device 100 is operating properly, or if it should be replaced with another device prior to beginning an experiment.

The user interface 128 may display information about the flow cell 101 and the output signals received from the integrated circuit device 100, including displaying messages notifying the user of any defects associated with the integrated circuit device 100. The user interface 128 may also display instrument settings and controls, and allow a user to enter or set instrument settings and controls.

During an experiment, the array controller 124 also collects and processes output signals from the chemical sensors of the sensor array. The array controller 124 may be a computer or other computing means. The array controller 124 may include memory for storage of data and software applications, a processor for accessing data and executing applications, and components that facilitate communication with the various components of the system in FIG. 1.

In an exemplary embodiment, during the experiment the fluidics controller 118 may control delivery of the individual reagents 114 to the flow cell 101 and integrated circuit device 100 in a predetermined sequence, for predetermined durations, at predetermined flow rates. The array controller 124 can then collect and analyze the output signals of the chemical sensors due to reactions occurring in response to the delivery of the reagents 114.

The values of the output signals of the chemical sensors indicate physical and/or chemical parameters of one or more reactions taking place in the corresponding microwells in the microwell array 107. For example, in an exemplary embodiment, the values of the output signals may be processed using the techniques disclosed in Rearick et al., U.S. patent application Ser. No. 13/339,846, filed Dec. 29, 2011, based on U.S. Prov. Pat. Appl. Nos. 61/428,743, filed Dec. 30, 2010, and 61/429,328, filed Jan. 3, 2011, and in Hubbell, U.S. patent application Ser. No. 13/339,753, filed Dec. 29, 2011, based on U.S. Prov. Pat. Appl. No. 61/428,097, filed Dec. 29, 2010, which are all incorporated by reference herein in their entirety.

During the experiment, the system may also monitor and control the temperature of the integrated circuit device 100, so that reactions take place and measurements are made at a known predetermined temperature.

The system may be configured to let a single fluid or reagent contact the reference electrode 108 throughout an entire multi-step reaction during operation. The valve 112 may be shut to prevent any wash solution 110 from flowing into passage 109 as the reagents 114 are flowing. Although the flow of wash solution may be stopped, there may still be uninterrupted fluid and electrical communication between the reference electrode 108, passage 109, and the microwell array 107. The distance between the reference electrode 108 and the junction between passages 109 and 111 may be selected so that little or no amount of the reagents flowing in passage 109 and possibly diffusing into passage 111 reach the reference electrode 108. In an exemplary embodiment, the wash solution 110 may be selected as being in continuous contact with the reference electrode 108, which may be especially useful for multi-step reactions using frequent wash steps.

FIG. 2 illustrates cross-sectional and expanded views of a portion of the integrated circuit device 100 and flow cell 101. During operation, the flow chamber 105 of the flow cell 101 defines a reagent flow 208 of delivered reagents across open ends of the microwells in the microwell array 107. The volume, shape, aspect ratio (such as base width-to-well depth ratio), and other dimensional characteristics of the microwells may be selected based on the nature of the reaction taking place, as well as the reagents, byproducts, or labeling techniques (if any) that are employed.

The expanded view of FIG. 2 illustrates a representative microwell 201 in the microwell array 207, and a corresponding chemical sensor 214 in the sensor array 205. The sensor array 205 also includes one or more reference sensors (not shown).

The chemical sensor 214 can be a chemical field-effect transistor (chemFET), more specifically an ion-sensitive FET (ISFET), with a floating gate 218 having a sensor plate 220 separated from the microwell interior by an ion-sensitive layer 216. The sensor plate 220 may for example include multiple patterned layers of conductive material. The ion-sensitive layer 216 may for example be an oxide of an upper layer of conductive material of the sensor plate 220. Reactants, wash solutions, and other reagents may move in and out of the microwells by a diffusion mechanism 240.

The chemical sensor 214 can be responsive to (and generate an output signal related to) the amount of a charge 224 present on ion-sensitive layer 216 opposite the sensor plate 220. Changes in the charge 224 can cause changes in the threshold voltage of the chemFET, which can be measured by measuring the current between a source 221 and a drain 222 of the chemFET. In doing so, the chemFET can be used directly to provide a current-based output signal on an array line connected to the source 221 or drain 222, or indirectly with additional circuitry to provide a voltage-based output signal.

In an embodiment, reactions carried out in the microwell 201 can be analytical reactions to identify or determine characteristics or properties of an analyte of interest. Such reactions can generate directly or indirectly byproducts that affect the amount of charge adjacent to the sensor plate 220. If such byproducts are produced in small amounts or rapidly decay or react with other constituents, multiple copies of the same analyte may be analyzed in the microwell 201 at the same time in order to increase the output signal generated. In an embodiment, multiple copies of an analyte may be attached to a solid phase support 212, either before or after deposition into the microwell 201. The solid phase support 212 may be microparticles, nanoparticles, beads, solid or porous comprising gels, or the like. For simplicity and ease of explanation, solid phase support 212 is also referred herein as a particle. For a nucleic acid analyte, multiple, connected copies may be made by rolling circle amplification (RCA), exponential RCA, or like techniques, to produce an amplicon without the need of a solid support.

FIG. 3 illustrates a schematic diagram of a portion of the integrated circuit device 100 including the sensor array 205 with chemical sensors and reference sensors.

The integrated circuit device 100 includes an access circuit for accessing the chemical sensors and the reference sensors in the sensor array 205. In the illustrated example, the access circuit includes a row circuit 305 coupled to the sensor array 205 via row lines 315, 360 and a reference line 358. The access circuit also includes column circuits (e.g. column circuit 310) coupled to the sensor array 205 via column lines (e.g. column line 310).

The row circuit 305 and the column circuit 310 are responsive to timing and control signals provided by the array controller 124 in FIG. 1 to select various sensors and operate the sensor array 205 as described below. The array controller 124 also provides a reference bias voltage to the reference electrode (not shown) to bias the reagents flowing over the sensor array 205 during operation.

The sensors of the sensor array 205 are arranged in rows and columns. One column is shown in FIG. 3, and includes chemical sensors 301.1-301.N, representing a small section of the sensor array 205 that can include millions of sensors. N may be an integer number larger than one (e.g., 1024, . . . , 4096, etc.).

In the illustrated example in FIG. 3, a separate column circuit is coupled to each column of sensors in the array. Thus, as shown in FIG. 3, a column circuit 310 is used to provide the output signals of each sensor in the illustrated column. Alternatively, other arrangements of the sensors and column circuits may be used. For example, a single column circuit may be shared among sensors in multiple columns. As another example, a first column circuit may be coupled to a first set of sensors in a particular column, and a second column circuit may be coupled to a second set of sensors in the particular column.

In the illustrated embodiment, each chemical sensor (e.g., 301.1, . . . , 301.N) includes a chemically-sensitive transistor (e.g., 302.1, . . . , 302.N, respectively) and two row select switches (e.g., 304.1 and 306.1 for chemical sensor 301.1, or 304.N and 306.N for sensor 301.N, respectively). Each chemically-sensitive transistor 302.1 to 302.N has a gate terminal that may be coupled to a chemically-sensitive passivation layer arranged within a corresponding microwell. In some embodiments, the gate terminal includes a floating gate structure extending between a passivation layer and a gate oxide overlying the channel. During operation, the passivation layer may be exposed to an analyte solution to be analyzed. Overlying the gate terminal of each chemical sensor (e.g., on top of the passivation layer), there may be a respective microwell for holding the solution.

Each chemically-sensitive transistor 302.1 to 302.N has first terminals coupled to first sides of corresponding first row select switches 304.1 to 304.N, and second terminals coupled to ground in this example. Alternatively, the second terminals may be coupled to a bias voltage other than ground. In FIG. 3, the chemically-sensitive transistor 302.1 is a PMOS transistor with the first terminal (i.e. the source) connected to a first side of the first row select switch 304.1, and a second terminal (i.e., the drain) connected to ground. Each first row select switch (e.g., 304.1, . . . , or 304.N) of each chemical detection pixel has a second side connected to a current source 108 used to provide a bias current during operation.

The first terminals of each chemically-sensitive transistor 302.1 to 302.N also serves as an output terminal of the respective chemical sensors 301.1 to 301.N and are coupled to a column line 310 via corresponding second row select switches 306 (e.g., 306.1 to 306.N). As shown in FIG. 3, each pair of row select switches 304 and 306 (e.g., 304.1 and 306.1) is coupled to the row select circuit 305 via respective row lines 315 (e.g. 315.1 to 315.N).

In a read operation of a selected chemical sensor 301.1, the row select circuit 305 facilitates providing a bias voltage to the row line 315.1 sufficient to turn on the row select switches 304.1 and 306.1. Turning on the row select switch 304.1 couples the selected chemical sensor 301.1 to a current source 108 which provides a bias current through the chemically-sensitive transistor 302.1. This in turn establishes a voltage at the output terminal of the chemically-sensitive transistor 302.1 based its threshold voltage, and thus based on characteristics or properties of an analyte of interest. Turning on the row select switch 306.1 couples the output terminal of the selected chemically-sensitive transistor 302.1 to the column line 310.

The column circuit 310 is coupled to the column line 310 for outputting an output signal V_(OUT) based on the voltage at the output terminal of the chemically-sensitive transistor 302.1. In the illustrated embodiment, the column output circuit 310 includes a sample and hold switch 320, a sample and hold capacitor 312, an output transistor 326, an output current source 328 used to bias the output transistor 326, a column select switch 330, and a column capacitor 332. Alternatively, other configurations for the column circuit may be used.

The sample and hold switch 320 is responsive to a sample and hold signal to selectively couple the sample and hold capacitor 312 to the column line 310. Doing so stores a voltage V_(SH) on the capacitor 312 based on the voltage at the output terminal of the chemically-sensitive transistor 302.1 of the selected chemical sensor 301.1. When the sample and hold switch 320 is open, it provides isolation from the selected chemical sensor 301.1 during readout of the voltage V_(SH) on the capacitor 312.

The column select switch 330 is responsive to a column select signal to couple the output transistor 326 to the column capacitor 332 to readout the voltage V_(SH). When the column select switch 330 is closed, the output transistor 326 produces an output signal V_(OUT) of the selected chemical sensor 301.1 on the column capacitor 332 based on the voltage V_(SH). The column capacitor 312 may be a discrete capacitor, and/or represent inherent capacitance of the column bus.

As mentioned above, the sensor array 205 also includes reference sensors to facilitate detection and/or identification of defects as described herein. The detection of the defects may be performed during an evaluation process, prior to use of the chemical sensors of the sensor array 205 in an experiment. In the illustrated example, the sensor array 205 includes reference sensor 350 within the same column as the chemical sensors chemical sensors 301.1-301.N.

The reference sensor 350 in this example includes a reference transistor 352 and a pair of reference select switches 354 and 356. The control terminal of the reference transistor 352 is coupled to the row circuit 305 via a reference line 358. In the illustrated example, the reference transistor is a field effect transistor with a gate terminal coupled to the reference line 358. The gates of the reference select switches 354 and 356 are coupled to the row circuit via a row line 360.

During the evaluation process, the row select circuit 305 facilitates providing a voltage to the row line 360 sufficient to turn on the reference select switches 354 and 356. The row select circuit 305 further facilitates providing a voltage to the reference line 358 sufficient to place the reference transistor 352 in a known state. This known state may for example be an off state (i.e. non-conducting) or an on state (i.e. conducting) of the reference transistor 352.

Turning on the reference select switch 354 couples the reference sensor 350 to the current source 308 to induce a bias current through the reference transistor 352. This in turn establishes a voltage at the output terminal (i.e. the source terminal in this example) of the reference transistor 352 based on the known state of the reference transistor 352. For example, if the voltage applied to the reference line 358 is sufficient to turn on the reference transistor 352, the voltage at the output terminal of the reference transistor 352 will be pulled low. Otherwise, the voltage at the voltage at the output terminal will be high.

Turning on the reference select switch 356 couples the output terminal of the reference transistor 352 to the column line 310. Similar to the discussion above, the column output circuit 310 can then generate an output signal V_(OUT) based on the voltage at the output terminal of the reference transistor 352.

A defect associated with the integrated circuit device 100 can then be determined by comparing the value of the output signal V_(OUT) to an expected range of values corresponding to the known state of the reference transistor 352. If the voltage of the output signal V_(OUT) does not correspond to the known state, this indicates one or more defects may be present in the row circuit 30, the column circuit 310, and/or in the reference sensor 350 itself. These defects can prevent the integrated circuit device 100 from operating properly during a subsequent experiment. These defects may due to problems with the fabrication and/or assembly of the integrated circuit device 100.

FIG. 4 is a flow chart of an example process for detecting a defect associated with a sensor array according to an exemplary embodiment. Other embodiments may perform the steps in different orders and/or perform different or additional steps than the ones illustrated in FIG. 4. For convenience, FIG. 4 will be described with reference to a system that performs the process. The system can be for example, the system of FIG. 1.

At step 410, a bias voltage is applied to place a transistor of a reference sensor of an integrated circuit device in a known state. The reference sensor is part of a sensor array which includes a chemical sensor, such as those described above. The known state may for example be an off state or an on state of the transistor.

At step 420, an output signal from the reference sensor is acquired in response to the applied bias voltage.

At step 430, the system determines whether the output signal corresponds to the known state. This determination can be made by comparing the value of the acquired output signal to an expected range of values. The expected range of values can vary from embodiment to embodiment, and may for example be determined empirically.

If the output signal does not correspond to the known state, this indicates that a defect exists and the process continues step 440. In one embodiment, if a defect is detected, a message is displayed notifying the user of the defect. In yet another embodiment, the message displayed to the user is to not use the integrated circuit device in a subsequent experiment.

If the output signal does correspond to the known state, no defect has been detected and the process continues to step 450. After step 450, the integrated circuit device may then be used for a subsequent experiment. This experiment can include using the sensor array of the integrated circuit device for nucleic acid sequencing as described above.

In embodiments in which the integrated circuit device includes multiple reference sensors, each reference sensor may be operated using the process of FIG. 4. In such a case, the total number of detected defects may be counted. This total number of defects can then be compared to a predetermined number to determine whether the device should be used in a subsequent experiment. For example, if the total number of defects exceeds the predetermined number, a message may be displayed advising the user to scrap the integrated circuit device.

FIG. 5 illustrates a simplified block diagram of an integrated circuit device 500 including a sensor array 510 with first and second sets of reference sensors 520 arranged along the periphery of the array.

The integrated circuit device 500 includes a row circuits 506 and column circuits 508 for reading the output signals from the sensors in the sensor array 510 via array lines 507 and 509 (e.g. row line, reference lines, and column lines). The row circuits 506 and column circuits 508 read the sensors in response to timing and control signals provided by an array controller (not shown in FIG. 5).

In the illustrated example, the reference sensors 520 are located at the periphery of the sensor array 510. The reference sensors 520 (depicted in FIG. 5 as squares) and the chemical sensors (depicted in FIG. 5 as circles) are arranged in rows and columns. In this example, the sensor array 510 includes 81 chemical sensors arranged into 9 rows and 9 columns. As also shown in FIG. 5, the reference sensors 520 are arranged in the top three rows, bottom three rows, left-most three columns, and right-most three columns of the sensor array 510. Alternatively, the arrangement and the number of the reference sensors 520 and the chemical sensors may be different.

In the illustrated example, the reference sensors 520 have the same structure as the chemical sensors. That is, each reference sensor 520 includes a transistor coupled to a microwell. However, the reference sensors 520 are not used to detect analytes in solution during the normal operation of the integrated circuit device 500. Rather, the gate terminals of the transistors of the reference sensors 520 are coupled to the row circuits 506 via array lines 507 (e.g. reference lines) to facilitate preliminary test/evaluation data, offset determination, and/or array calibration of the sensor array 510 as described herein.

In FIG. 5, chemical sensors and reference sensors 520 in each column of sensor array 510 are electronically coupled to one another via a common column line and share a dedicated column circuit within block 508. In this example, the drain terminal of each of the chemical sensors and reference sensors 520 along a given column are electrically coupled to one another, similar to the arrangement shown in FIG. 3.

Similarly, chemical sensors and reference sensors along a given row of the array 510 are coupled to a common row line and common row circuit in block 506 used to activate row select switches for each sensor along the given row. Therefore, with a unique row-column addressing signal input into column circuits 508 and row circuits 506, each of the chemical sensors and reference sensors 520 in the sensor array 510 can be individually accessed and read. For instance, reference sensors 520 ₀, 520 ₁, 520 ₁₅, and 520 ₁₆ can be individually accessed via a column circuit in block 508 and a row circuit in block 506 with unique row-column addressing signals.

In FIG. 5, transistors of alternating reference sensors 520 along a given row have their gate terminals tied to a first reference line and the remaining reference pixels along the same common row have their gate terminals tied to a second reference line. The first and second reference lines can be supplied with separate bias voltages generated by on-chip circuitry, or by an external power supply to the integrated circuit device.

In summary, gate terminals of reference sensors 520 ₀, 520 ₂, 520 ₄, and so forth (e.g., alternating reference sensors depicted as white squares along the top row) are tied to the first reference line and gate terminals of reference sensors 520 ₁, 520 ₃, 520 ₅, and so forth (e.g., alternating reference sensors depicted as hashed squares along the top row) are tied to the second reference line. This arrangement is replicated for each row of reference sensors 520 in sensor array 510, in which the gate terminals of half of the reference sensors 520 are tied to the first reference line and the gate terminals of the other half of the reference sensors 520 are tied to the second reference line.

As described in more detail below with reference to FIG. 6, with this alternating arrangement of reference sensors 520, the sensor array 510 can be tested to simultaneously identify defective column circuits, defective row circuits, and/or defective reference sensors. That is, the type of defect can be determined.

FIG. 6 is a flow chart of an example process for determining whether defects are associated with the sensor array of FIG. 5 according to an exemplary embodiment. Other embodiments may perform the steps in different orders and/or perform different or additional steps than the ones illustrated in FIG. 6.

In step 610, a first bias voltage is applied to the gate terminals of transistors of a first set of reference sensors to place these transistors in a first known state. In this example, the first bias voltage is a voltage level sufficient to turn “ON” the transistors of the first set of reference sensors. For example, if a reference sensor in the first set includes an n-channel transistor with its source terminal coupled to ground, the first bias voltage is above the threshold voltage of the n-channel transistor.

In step 620, a second bias voltage is applied to gate terminals of a second set of reference sensors to place these transistors in a second known state. In this example, the second bias voltage is a voltage level sufficient to turn “OFF” the transistors of the second set of reference sensors. For example, if a reference sensor in the first set includes an n-channel transistor with its source terminal coupled to ground, the second bias voltage is less than the threshold voltage of the n-channel transistor (e.g. zero volts or a negative voltage).

Based on the physical dimensions, electrical characteristics, and voltage applied to the gate terminals of the transistors in the reference sensors, an expected voltage value or voltage range can be calculated and/or measured for both ON and OFF states.

In step 630, first output signals of the first and second sets of reference sensors are read out using access circuits. For instance, with reference to FIG. 5, the reference sensors 520 are read out using the column circuits 508 and row circuits 506.

In a properly functioning array, the first output signals from the first set of reference sensors correspond to the first known state. Similarly, the first output signals from the second set of reference sensors correspond to the second known state if the array is functioning properly. In an embodiment, the first output signals from the first and second sets of reference sensors can be stored in a memory device, either on-chip or off-chip, for later processing and/or analysis to detect defects.

Next, in step 640, the second bias voltage is applied to gate terminals of the first set of reference sensors to place these transistors in the second known state. As described above, in this example, the second bias voltage is a voltage level sufficient to turn “OFF” the transistors of the first set of reference sensors.

In step 650, the first bias voltage is applied to gate terminals of the second set of reference sensors to place these transistors in the first known state. As described above, in this example, the first bias voltage is a voltage level sufficient to turn “ON” the transistors of the second set of reference sensors.

In step 660, second output signals of the first and second sets of reference sensors are read out. In a properly functioning array, the second output signals from the first set of reference sensors corresponding to the second known state. Similarly, the second output signals from the second set of reference sensors correspond to the first known state if the array is functioning properly.

In step 670, the first and second output signals are analyzed to detect defects. Defects in the array can include, for example but not limited to, a defective row circuit, a defective column circuit, and/or a defective reference sensor.

The identification of a defective row circuit can be made if all of the reference sensors in a corresponding particular row produce first and/or second output signals with unexpected or errant values. For instance, the first set of reference sensors in step 610 and the second set of reference pixels in step 650 are applied a voltage sufficient to turn ON the transistors in these reference sensors. If during these steps, none of the reference sensors in the particular row produce output signals which correspond to the ON state, this is an indication that the row circuit for that particular row is defective.

The identification of a defective column circuit can be made in a similar manner That is, a defective column circuit can be identified if all of the reference sensors from a corresponding particular column produce first and/or second output signals having unexpected or errant values.

The first and second output signals may also be analyzed to determine whether individual reference sensors are defective. For example, a given reference sensor can be identified as defective by comparing its first output signal to its second output signal. For instance, if the output signal of the given reference sensor does not change in value between the application of the first bias voltage and the application of the second output signal, this is an indication that the given reference sensor is defective.

A defective reference sensor may also be identified if adjacent reference sensors provide output signals indicating that the access circuits for that reference sensor are functioning properly. For instance, with reference to FIG. 5, if reference sensor 520 ₁ and 520 ₁₅ provide output signals within the expected ranges, and reference sensor 520 ₁₆ provides one or more output signals outside the expected ranges, this is an indication that the reference sensor 520 ₁₆ is defective. That is because, since reference sensor 520 ₁ provides a proper output signal, this in an indication that the column circuit shared by the column of sensors (including reference sensor 520 ₁ and reference sensor 520 ₁₆) is functioning properly. Also, since reference sensor 520 ₁₅ provides a proper output signal, this is an indication that the row circuit for that row is functioning properly—reference sensor 520 ₁₅ and 520 ₁₆ share a common row circuit. Therefore, since the row and column circuits associated with the row and column containing the reference sensor 520 ₁₆ produce proper output signals for at least some of the reference sensors in that row and that column, this is an indication that the reference sensor 520 ₁₆ itself is defective.

Similar to the discussion above with respect to FIG. 4, in some embodiments the total number of detected defects may be counted. The total number of defects can then be compared to a predetermined number to determine whether the device can be used in a subsequent experiment. If the total number of defects exceeds the predetermined number, a message may be displayed to the user is to scrap the integrated circuit device. Alternatively, other techniques may be used to prevent the use of the defective integrated circuit device.

In some embodiments, the types of defects are each counted individually and compared to corresponding predetermined numbers to determine whether the device should used in a subsequent experiment. For instance, the total number of defective column circuits, the total number of defective row circuits, and the total number of defective reference sensors may be counted individually. In some embodiments, if the total number of defects for any defect type exceeds its respective predetermined number, a message may be displayed to the user is that integrated circuit device is defective and should not be used in the subsequent experiment.

The techniques described herein may be used with various nucleic acid sequencing techniques and apparatuses, including those described in U.S. Patent Application Publication No. 2010/0300559, No. 2010/0197507, No. 2010/0301398, No. 2010/0300895, No. 2010/0137143, and No. 2009/0026082, and U.S. Pat. No. 7,575,865. Such sequencing platforms may involve sequencing-by-synthesis techniques that operate by the detection of inorganic pyrophosphate or hydrogen ions produced by nucleotide incorporation reactions. In some cases, the sensor array is a chemFET sensor array. In some cases, the chemFET sensors of the sensor array detect hydrogen ions. In some cases, flowing of the reagent(s) onto the sensor array causes chemical reactions that release hydrogen ions. In some cases, the amplitude of the signals from the chemFET sensors is related to the amount of hydrogen ions detected.

Various embodiments may be implemented using hardware elements, software elements, or a combination of both. Examples of hardware elements may include processors, microprocessors, circuits, circuit elements (e.g., transistors, resistors, capacitors, inductors, and so forth), integrated circuits, application specific integrated circuits (ASIC), programmable logic devices (PLD), digital signal processors (DSP), field programmable gate array (FPGA), logic gates, registers, semiconductor device, chips, microchips, chip sets, and so forth. Examples of software may include software components, programs, applications, computer programs, application programs, system programs, machine programs, operating system software, middleware, firmware, software modules, routines, subroutines, functions, methods, procedures, software interfaces, application program interfaces (API), instruction sets, computing code, computer code, code segments, computer code segments, words, values, symbols, or any combination thereof. Determining whether an embodiment is implemented using hardware elements and/or software elements may vary in accordance with any number of factors, such as desired computational rate, power levels, heat tolerances, processing cycle budget, input data rates, output data rates, memory resources, data bus speeds and other design or performance constraints.

Some embodiments may be implemented, for example, using a computer-readable medium or article which may store an instruction or a set of instructions that, if executed by a machine, may cause the machine to perform a method and/or operations in accordance with the embodiments. Such a machine may include, for example, any suitable processing platform, computing platform, computing device, processing device, computing system, processing system, computer, processor, or the like, and may be implemented using any suitable combination of hardware and/or software. The computer-readable medium or article may include, for example, any suitable type of memory unit, memory device, memory article, memory medium, storage device, storage article, storage medium and/or storage unit, for example, memory, removable or non-removable media, erasable or non-erasable media, writeable or re-writeable media, digital or analog media, hard disk, floppy disk, read-only memory compact disc (CD-ROM), recordable compact disc (CD-R), rewriteable compact disc (CD-RW), optical disk, magnetic media, magneto-optical media, removable memory cards or disks, various types of Digital Versatile Disc (DVD), a tape, a cassette, or the like. The instructions may include any suitable type of code, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, and the like, implemented using any suitable high-level, low-level, object-oriented, visual, compiled and/or interpreted programming language.

While the present invention is disclosed by reference to the preferred embodiments and examples detailed above, it is to be understood that these examples are intended in an illustrative rather than in a limiting sense. It is contemplated that modifications and combinations will readily occur to those skilled in the art, which modifications and combinations will be within the spirit of the invention and the scope of the following claims. What is claimed is: 

What is claimed:
 1. A semiconductor device, comprising: an array of field-effect transistor (FET) sensors arranged in a plurality of rows and a plurality of columns, the array including a plurality of chemical sensors, each chemical sensor coupled to a corresponding reaction region for receiving at least one reactant, and a plurality of reference sensors, each reference sensor including a reference transistor with a first terminal directly coupled to a first reference select switch to apply a bias voltage to the reference transistor and directly coupled to a second reference select switch to couple the first terminal of the reference transistor to a column line; and an access circuit for accessing the chemical sensors and the reference sensors, wherein the access circuit includes a plurality of reference lines coupled to a gate terminal of each reference transistor in a corresponding set of reference sensors;
 2. The semiconductor device of claim 1, wherein each chemical sensor is a chemically-sensitive transistor.
 3. The semiconductor device of claim 1, wherein the bias voltage is sufficient to place the reference transistor in one of an on state or an off state.
 4. The semiconductor device of claim 1, wherein the chemical sensor generates a sensor signal in response to a chemical reaction occurring within the reaction region.
 5. The semiconductor device of claim 1, wherein a chemical reaction in the reaction region is a sequencing reaction.
 6. The semiconductor device of claim 1, wherein the chemical sensor and the reference sensor share the access circuit. 